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  tfdu4201a vishay semiconductors rev. a1.4, 29-jan-01 1 (10) www.vishay.com document number 82530 integrated low profile transceiver module for telecom applications irda standard description the miniaturized tfdu4201 is an ideal transceiver for applications in telecommunications like mobile phones and pagers. the infrared transceiver is compatible to the irda low power physical layer specification up to a data rate of 115 kbit/s. tfdu4201a is a tfdu4201 attached to a 4.75 mm spacer. tfdu4201a is electrically identical with tfdu4201. the only difference is that these devices are soldered to a pcb as spacer to be compliant with a customer demand for centering the optical axis to a given window. package features  package dimension: l 9.9 mm x w 6.1 mm x h 7.6 mm  compatible to irda low power standard  smd side view  lowest power consumption 55 m a receive mode, 1 m a shutdown  only 30 ma ired peak current during transmission  wide supply voltage range (2.4 v to 3.6 v)  operational down to 2.0 v  fewest external components  internal current control  tristate output (rxd)  high emi immunity  sd pin applications mobile phones, pagers, personal digital assistants (pda), handheld battery operated equipment
tfdu4201a vishay semiconductors rev. a1.4, 29-jan-01 2 (10) www.vishay.com document number 82530 ordering information part number qty / reel description tfdu4201atr3 600 oriented in carrier tape for side view mounting, tfdu4201 on a 4.75 mm thick spacer functional block diagram comparator amplifier control logic tristate driver v cc txd sd rxd control controlled driver gnd gnd figure 1. functional block diagram pin description pin symbol description i/o active 1 v cc supply voltage 2 ired gnd ired cathode ground, ground 3 ired gnd ired cathode ground, ground 4 rxd output, received data, tri-state, floating in shutdown mode (v cc /sd = low) o low 5 txd input transmit data i high 6 sd shutdown i high 7 gnd ired cathode ground, ground 8 nc
tfdu4201a vishay semiconductors rev. a1.4, 29-jan-01 3 (10) www.vishay.com document number 82530 absolute maximum ratings reference point pin 8, unless otherwise noted. parameter test conditions symbol min. typ. max. unit remarks supply voltage range v cc 0.5 6 v input current 10 ma all input pins output sink current 25 ma power dissipation p tot 200 mw see figure 3 junction temperature t j 125 ? ?????? ????????? ???? ????????? ? ?? ? ? ? ??????? ????????? ???? ? ??? ? ? ? ????????? ????????? ? ? ? ??? ? ?? ?? ? ??? ????? ???? ?????? ???? ??????? ??? ???????? ? ??? ???? ?? ? ???????? ????? ????? ?????? ? ??? ??? ? ? ?? ? ? ?? ??? ?????????? ???? ???? ??????? ? ?? ? ? ?? ? ? ??????? ???? ??? ??????? ? ?? ? ? ?? ? ? ?????? ????? ???? ?????? ????? ????????? ????? ? ? ? ???????? ?? ????? ? ???????? ?? ??? M? ?? ??M? ???? ????? ???? ???? ?? ???? ?????? ??? ???? ?? ???? ???? ????? ?? ??? ?????? ? ??????? ?? ?? ????????? ?????? ????? ?????????? ??????????????? ?????? ??? ??? ????????? ???????? ?? ?? ?? ? ?? ??M ? ? ? ????? ????????? ??????? ??????? ???? ?????????? ???? ??? ?? ?? ???? ????? ??????????? ??????? ???? ???? ???? ??? ??M ??? ???? ??? ??????? ???? ? ?? ?? ??M ? ????????? ???? ?? ?? ? ??? ?????? ? ?? ?? ? ?? ? ? ? ? ? ? ? ? ? ?????? ???? ??? ????????? ???? ? ?? ?? ? ?? ? ? ? ?? ??????? ? ? ? ? ? ? ??????? ???? ? ??????? ? ? ? ?? ?? ?????? ????????? ???? ?? ????????? ? ? ??? ??? ?????? ??????????? ? ?? ? ? ? ?? ?? ? ? ??? ? ? ? ? ? ?? ??????? ??????????? a???? ?a ???????? ??? ? ? ??? ??? ????????? ?? ? ?? ?? ?????????? ???????? ???????
tfdu4201a vishay semiconductors rev. a1.4, 29-jan-01 4 (10) www.vishay.com document number 82530 optoelectronic characteristics tested for the following parameters (v cc = 2.4 v to 3.6 v, 25 5 c, unless otherwise stated) parameter test conditions symbol min. typ max. unit remarks receiver minimum detection threshold irradiance | a | 3+ 15 5 v cc = 2.4 v to 5.5 v e e, min 25 40 mw/m 2 maximum detection threshold irradiance | a | 3+ 90 5 v cc = 5 v e e, max 3300 5000 w/m 2 | a | 3+ 90 5 v cc = 3 v e e, max 8000 15000 w/m 2 logic low receiver input irradiance e e,max,low 4 mw/m 2 output voltage rxd active v ol 0.5 0.8 v c = 15 pf, r = 2.2 k w non active v oh v cc 0.5 v c = 15 pf, r = 2.2 k w output current rxd v ol < 0.8 v 4 ma rise time @load: c = 15 pf, r = 2.2k t r 20 200 ns fall time @load: c = 15 pf, r = 2.2k t f 20 200 ns rxd signal electrical output pulse width 2.4 kbit/s, input pulse width 1.41 m s to 3/16 of bit duration t p 1.4 20 m s rxd signal electrical output pulse width 115.2 kbit/s, input pulse width 1.41 m s to 3/16 of bit duration t p 1.4 4.5 m s output delay time (rxd), leading edge optical input to electrical output output level = 0.5 v v cc @ 40 mw/m 2 t dl 1 2 m s jitter, leading edge of output signal over a period of 10 bit, 115.2 kbit/s t j 300 ns output delay time (rxd), trailing edge optical input to electrical output output level = 0.5 v v cc 40 mw/m 2 t dt 6.5 m s latency t l 100 200 m s
tfdu4201a vishay semiconductors rev. a1.4, 29-jan-01 5 (10) www.vishay.com document number 82530 optoelectronic characteristics (continued) tested for the following parameters (v cc = 2.4 v to 3.6 v, 25 5 c, unless otherwise stated) parameter test conditions symbol min. typ max. unit remarks transmitter logic low transmitter input voltage v il (txd) 0 0.8 v logic high transmitter input voltage v ih (txd) 2.4 v cc v controlled current i e = 4 mw/sr to 28 mw/sr in | a | 3 + 15 5 i f1 25 30 35 ma voltage range 2.4 v to 5.5 v output radiant intensity, | a | 3 + 15 5 i f1 = 25 ma to 35 ma i e 4 8 28 mw/sr current controlled, 20% duty cycle. peak emission wavelength l p 850 900 nm spectral emission bandwidth 60 nm optical rise/falltime 115.2 khz square wave signal (duty cycle 1:1) 200 ns optical output pulse duration input pulse duration 1.6 m s 1.6 2.2 m s output radiant intensity logic low level 0.04 m w/sr overshoot, optical 25 % rising edge peak to peak jitter over a period of 10 bits, independent of information content t j 0.2 m s recommended smd pad layout 15179 1.5 2 6 1.8 4.6 figure 2. pad layout current derating diagram 0 100 200 300 400 500 600 40 20 0 20 40 60 80 100 120 140 peak operating current ( ma ) temperature ( 5 c ) 14875 current derating as a function of the maximum forward current of ired. maximum duty cycle: 25%. figure 3. shows the current derating of the emitter chip as a function of ambient temperature and duty cycle, see absolute maximum ratings. this is for information only. the tfdu4201 has an internal current control. therefore, most of this curve is not relevant for this device because the higher currents are not intended to be used.
tfdu4201a vishay semiconductors rev. a1.4, 29-jan-01 6 (10) www.vishay.com document number 82530 tfdu4201a(mechanical dimensions) 16523
tfdu4201a vishay semiconductors rev. a1.4, 29-jan-01 7 (10) www.vishay.com document number 82530 15181
tfdu4201a vishay semiconductors rev. a1.4, 29-jan-01 8 (10) www.vishay.com document number 82530 appendix application hints the tfdu4201 does not need any external components when operated at a acleana power supply. in a more noisy ambient it is recommended to add a capacitor and a resistor for noise suppression. a combination of a tantalum with a ceramics capacitor will be most efficient. recommended circuit diagram tfdu4201a r1 sd rxd c1 gnd v cc txd 1, 2, 5, 6 4 3 7 8 gnd v cc rxd txd sd shut down to shut down the tfdu4201 into a standby mode the sd pin has to be set active. for minimizing the shutdown current it is recommended to use a logic high level of >0.9 x v cc latency the receiver is in specified conditions after the defined latency. in a uart related application after that time (typically 50 m s) the receiver buffer of the uart must be cleared. therefore the transceiver has to wait at least the specified latency after receiving the last bit before starting the transmission to be sure that the corresponding receiver is in a defined state. table 1. recommended application circuit components *) component recommended value vishay part number c1 4.7  f 293d 475x9 016b 2t r1 5  max *) this is a recommendation for a combination to start with to exclude power supply effects. optimum, from a costs point of view, to work without both.
tfdu4201a vishay semiconductors rev. a1.4, 29-jan-01 9 (10) www.vishay.com document number 82530 revision history: a1.2, 07/04/1999: new edition a1.2, 08/07/1999: correction of typos: 2.4 v instead of 2.7 v in the full context, and missing measurement conditions added. a1.3, 13/10/2000: first public release a1.4, 29/01/2001: typos corrected, storage temperature increased, ired peak current increased, minimum detection threshold improved, latency increased, output radiation intensity, improved.
tfdu4201a vishay semiconductors rev. a1.4, 29-jan-01 10 (10) www.vishay.com document number 82530 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.


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